The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2014

Filed:

Apr. 06, 2011
Applicants:

Wei Min LI, Shanghai, CN;

Herb H. Huang, Shanghai, CN;

Inventors:

Wei Min Li, Shanghai, CN;

Herb H. Huang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
Abstract

A liquid crystal on silicon display device (LCOS) has a semiconductor substrate comprising a surface region and a gate dielectric layer overlying the surface region. The device also has a word line formed overlying the gate dielectric layer and a first source/drain region coupled to the word line. The device has a bottom electrode structure formed overlying an interlayer dielectric. A capacitor dielectric is formed overlying the bottom electrode. A top electrode structure is formed overlying the capacitor dielectric to form a capacitor structure including the bottom electrode structure, the capacitor dielectric, and the top electrode structure. The device has a mirror surface formed overlying the top electrode structure to form a pixel electrode structure and a liquid crystal material provided overlying the mirror surface. In an embodiment, the LCOS described above is in an integrated circuit chip that also includes a DRAM device.


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