The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Sep. 19, 2005
Hiroshi Haga, Tokyo, JP;
Tomohiko Otose, Kanagawa, JP;
Hideki Asada, Tokyo, JP;
Yoshihiro Nonaka, Tokyo, JP;
Takahiro Korenari, Tokyo, JP;
Kenichi Takatori, Tokyo, JP;
Hiroshi Haga, Tokyo, JP;
Tomohiko Otose, Kanagawa, JP;
Hideki Asada, Tokyo, JP;
Yoshihiro Nonaka, Tokyo, JP;
Takahiro Korenari, Tokyo, JP;
Kenichi Takatori, Tokyo, JP;
Gold Charm Limited, Apia, WS;
Abstract
A device excellent in electrical characteristics is provided by suppressing an operation failure owing to a hysteresis effect that occurs in a circuit using MOS transistors having floating bodies. Moreover, sensitivity of a sense amplifier circuit and a latch circuit including these MOS transistors as components is improved. A signal required in a circuit other than a first circuit is outputted by using electrical characteristics of MOS transistors in a first period (effective period), and in a second period (idle period) excluding the first period, between the gate and source of MOS transistors, a step waveform voltage not less than threshold voltages of these MOS transistors is given.