The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Mar. 21, 2012
Hirotake Honda, Yokohama, JP;
Hiroaki Maeda, Yokohama, JP;
Yousuke Okazaki, Kawasaki, JP;
Yoshinobu Shizawa, Yokohama, JP;
Hirotake Honda, Yokohama, JP;
Hiroaki Maeda, Yokohama, JP;
Yousuke Okazaki, Kawasaki, JP;
Yoshinobu Shizawa, Yokohama, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A power amplifying apparatus has a GaN device for RF amplification, a GaN device for monitoring, an Idq detecting circuit, and a gate bias control (GBC) circuit. The GaN device for RF amplification amplifies an input signal to output the resultant. The GaN device for monitoring is an amplification device for monitoring an input/output signal of the GaN device for RF amplification. The Idq detecting circuit detects an output signal output by the GaN device for monitoring, corresponding to an input signal, which is diverged from the input signal to be input to the GaN device for RF amplification, and is input to the GaN device for monitoring. The gate bias control circuit controls a gate voltage to be applied to the GaN device for RF amplification in accordance with the output signal detected by the Idq detecting circuit.