The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Apr. 25, 2011
Yong-sang Cho, Hwaseong-si, KR;
Jang-hyuk an, Yongin-si, KR;
Ihl-hwa Moon, Hwaseong-si, KR;
Jae-young Lee, Suwon-si, KR;
Kyung-hwan Kim, Seongnam-si, KR;
Yong-sang Cho, Hwaseong-si, KR;
Jang-hyuk An, Yongin-si, KR;
Ihl-hwa Moon, Hwaseong-si, KR;
Jae-young Lee, Suwon-si, KR;
Kyung-hwan Kim, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A time dependent dielectric breakdown (TDDB) test structure of a semiconductor device includes: a first test cell having a first test pattern in which a dielectric layer is formed between two electrodes; a second test cell spaced apart from the first test cell and having a second test pattern in which a dielectric layer is formed between two electrodes; and a barrier region configured to prevent electrical interference from occurring between the first test cell and the second test cell during a TDDB test.