The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2014

Filed:

Feb. 18, 2011
Applicants:

John P. Prineas, Iowa City, IA (US);

Jonathan T. Olesberg, Iowa City, IA (US);

Chris Coretsopoulos, Iowa City, IA (US);

Inventors:

John P. Prineas, Iowa City, IA (US);

Jonathan T. Olesberg, Iowa City, IA (US);

Chris Coretsopoulos, Iowa City, IA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0304 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
Abstract

An article of manufacture and a method of defining a photodetector element are provided. The article of manufacture includes a photodector element comprising a junction formed by a first III-V semiconductor layer having a first charge type and a second III-V semiconductor layer comprising a second dopant having a second charge type. The second III-V semiconductor layer is disposed between the first III-V semiconductor layer and a wafer. Patterned dopant regions having a third charge type, the third charge type being the same as the first charge type, are disposed in the first III-V semiconductor layer.


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