The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Oct. 17, 2012
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventor:
Ebenezer Eshun, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 49/02 (2006.01); H01L 29/8605 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 29/8605 (2013.01);
Abstract
An integrated circuit having a replacement HiK metal gate transistor and a front end SiCr resistor. The SiCr resistor replaces the conventional polysilicon resistor in front end processing and is integrated into the contact module. The first level of metal interconnect is located above the SiCr resistor. First contacts connect to source/drain regions. Second contacts electrically connect the first level of interconnect to either the SiCr resistor or the metal replacement gate.