The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Aug. 24, 2010
Wataru Saito, Kanagawa-ken, JP;
Syotaro Ono, Kanagawa-ken, JP;
Munehisa Yabuzaki, Hyogo-ken, JP;
Nana Hatano, Kanagawa-ken, JP;
Miho Watanabe, Tokyo, JP;
Wataru Saito, Kanagawa-ken, JP;
Syotaro Ono, Kanagawa-ken, JP;
Munehisa Yabuzaki, Hyogo-ken, JP;
Nana Hatano, Kanagawa-ken, JP;
Miho Watanabe, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a power semiconductor device includes a second semiconductor layer of a first conductivity type and a third semiconductor layer of a second conductivity type periodically disposed repeatedly along a surface of the first semiconductor layer on a first semiconductor layer of the first conductivity type. A first main electrode is provided to electrically connect to the first semiconductor layer. A fourth semiconductor layer of the second conductivity type is provided to connect to the third semiconductor layer. Fifth semiconductor layers of the first conductivity type are selectively provided in the fourth semiconductor layer surface. A second main electrode is provided on a surface of the fourth and fifth semiconductor layers. A control electrode is provided on a surface of the fourth, fifth, and second semiconductor layers via a gate insulating film. First insulating films are provided by filling a trench made in the second semiconductor layer.