The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2014

Filed:

Mar. 06, 2012
Applicants:

Jae-hwang Sim, Hwaseong-si, KR;

Jae-bok Baek, Hwaseong-si, KR;

Inventors:

Jae-Hwang Sim, Hwaseong-si, KR;

Jae-Bok Baek, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/76 (2006.01); H01L 21/70 (2006.01); H01L 27/108 (2006.01); H01L 29/94 (2006.01); H01L 21/336 (2006.01); H01L 21/76 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a substrate including a first region and a second region, a gate group disposed in the first region of the substrate, the gate group including a plurality of cell gate patterns and at least one selection gate pattern, a first gate pattern disposed in the second region of the substrate, a group spacer covering a top surface and a side surface of the gate group, the group spacer having a first inflection point, and a first pattern spacer covering a top surface and a side surface of the first gate pattern, the first pattern spacer having a second inflection point.


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