The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Mar. 01, 2011
Ryota Kitagawa, Tokyo, JP;
Akira Fujimoto, Kanagawa, JP;
Koji Asakawa, Kanagawa, JP;
Eishi Tsutsumi, Kanagawa, JP;
Takanobu Kamakura, Kanagawa, JP;
Shinji Nunotani, Tokyo, JP;
Masaaki Ogawa, Kanagawa, JP;
Ryota Kitagawa, Tokyo, JP;
Akira Fujimoto, Kanagawa, JP;
Koji Asakawa, Kanagawa, JP;
Eishi Tsutsumi, Kanagawa, JP;
Takanobu Kamakura, Kanagawa, JP;
Shinji Nunotani, Tokyo, JP;
Masaaki Ogawa, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.