The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Oct. 21, 2009
Shinichi Saito, Kawasaki, JP;
Masahiro Aoki, Kokubunji, JP;
Nobuyuki Sugii, Tokyo, JP;
Katsuya Oda, Hachioji, JP;
Toshiki Sugawara, Kokubunji, JP;
Shinichi Saito, Kawasaki, JP;
Masahiro Aoki, Kokubunji, JP;
Nobuyuki Sugii, Tokyo, JP;
Katsuya Oda, Hachioji, JP;
Toshiki Sugawara, Kokubunji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.