The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Feb. 09, 2012
Christos D. Dimitrakopoulos, Yorktown Heights, NY (US);
Damon B. Farmer, White Plains, NY (US);
Alfred Grill, White Plains, NY (US);
Yu-ming Lin, West Harrison, NY (US);
Deborah A. Neumayer, Danbury, CT (US);
Dirk Pfeiffer, Croton on Hudson, NY (US);
Wenjuan Zhu, Fishkill, NY (US);
Christos D. Dimitrakopoulos, Yorktown Heights, NY (US);
Damon B. Farmer, White Plains, NY (US);
Alfred Grill, White Plains, NY (US);
Yu-Ming Lin, West Harrison, NY (US);
Deborah A. Neumayer, Danbury, CT (US);
Dirk Pfeiffer, Croton on Hudson, NY (US);
Wenjuan Zhu, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A silicon nitride layer is provided on an uppermost surface of a graphene layer and then a hafnium dioxide layer is provided on an uppermost surface of the silicon nitride layer. The silicon nitride layer acts as a wetting agent for the hafnium dioxide layer and thus prevents the formation of discontinuous columns of hafnium dioxide atop the graphene layer. The silicon nitride layer and the hafnium dioxide layer, which collectively form a low EOT bilayer gate dielectric, exhibit continuous morphology atop the graphene layer.