The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8680510 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 25, 2014

Filed:

Jun. 28, 2010
Applicants:

Sarunya Bangsaruntip, Mount Kisco, NY (US);

Mikael Bjoerk, Affoltern am Albis, CH;

Guy M. Cohen, Mohegan Lake, NY (US);

Heike E. Riel, Baech, CH;

Heinz Schmid, Waedenswil, CH;

Inventors:

Sarunya Bangsaruntip, Mount Kisco, NY (US);

Mikael Bjoerk, Affoltern am Albis, CH;

Guy M. Cohen, Mohegan Lake, NY (US);

Heike E. Riel, Baech, CH;

Heinz Schmid, Waedenswil, CH;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a semiconductor is provided and includes patterning a pad and a nanowire onto a wafer, the nanowire being substantially perpendicular with a pad sidewall and substantially parallel with a wafer surface and epitaxially growing on an outer surface of the nanowire a secondary layer of semiconductor material, which is lattice mismatched with respect to a material of the nanowire and substantially free of defects.


Find Patent Forward Citations

Bangsaruntip, Sarunya. (2014). Method of forming compound semiconductor (U.S. Patent No. 8680510). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8680510

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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