The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Sep. 24, 2011
Takafumi Mizoguchi, Atsugi, JP;
Kojiro Shiraishi, Isehara, JP;
Takafumi Mizoguchi, Atsugi, JP;
Kojiro Shiraishi, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
Provided is a method for manufacturing a semiconductor device so as not expose a semiconductor layer to moisture and the number of masks is reduced. For example, a first conductive film, a first insulating film, a semiconductor film, a second conductive film, and a mask film are formed. The first mask film is processed to form a first mask layer. Dry etching is performed on the first insulating film, the semiconductor film, and the second conductive film with the use of the first mask layer to form a thin film stack body, so that a surface of the first conductive film is at least exposed. Sidewall insulating layers covering side surfaces of the thin film stack body are formed. The first conductive film is side-etched to form a first electrode. A second electrode layer is formed with the second mask layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile