The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2014

Filed:

Aug. 02, 2011
Applicants:

Miguel Urteaga, Moorpark, CA (US);

Richard L. Pierson, Jr., Thousand Oaks, CA (US);

Keisuke Shinohara, Thousand Oaks, CA (US);

Inventors:

Miguel Urteaga, Moorpark, CA (US);

Richard L. Pierson, Jr., Thousand Oaks, CA (US);

Keisuke Shinohara, Thousand Oaks, CA (US);

Assignee:

Teledyne Scientific & Imaging, LLC, Thousand Oaks, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A system for forming self-aligned contacts includes electroplating a first metal contact onto a Group III-V semiconductor substrate, the first metal contact having a greater height than width and having a straight sidewall profile, etching back the semiconductor substrate down to a base layer to expose an emitter semiconductor layer under the first metal contact, conformally depositing a dielectric layer on a vertical side of the first metal contact, a vertical side of the emitter semiconductor layer and on the base layer, anisotropically etching the dielectric layer off of the semiconductor substrate to form a dielectric sidewall spacer on the vertical side of the first metal contact and providing a second metal contact immediately adjacent the dielectric sidewall spacer.


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