The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8679949 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 25, 2014

Filed:

Mar. 31, 2011
Applicants:

Gyeong-su Park, Suwon-si, KR;

In-yong Song, Suwon-si, KR;

Sung Heo, Suwon-si, KR;

Dong-wook Kwak, Seongnam-si, KR;

Hoon Young Cho, Seongnam-si, KR;

Han-su Kim, Seoul, KR;

Jae-man Choi, Hwaseong-si, KR;

Moon-seok Kwon, Hwaseong-si, KR;

Inventors:

Gyeong-su Park, Suwon-si, KR;

In-yong Song, Suwon-si, KR;

Sung Heo, Suwon-si, KR;

Dong-wook Kwak, Seongnam-si, KR;

Hoon Young Cho, Seongnam-si, KR;

Han-su Kim, Seoul, KR;

Jae-man Choi, Hwaseong-si, KR;

Moon-seok Kwon, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silicon nanowire includes metal nanoclusters formed on a surface thereof at a high density. The metal nanoclusters improve electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.


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Park, Gyeong-su. (2014). Silicon nanowire comprising high density metal nanoclusters and method of preparing the same (U.S. Patent No. 8679949). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8679949

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