The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Dec. 06, 2011
Shanjen “robert” Pan, Allen, TX (US);
Allan T. Mitchell, Heath, TX (US);
Weidong Tian, Dallas, TX (US);
Shanjen “Robert” Pan, Allen, TX (US);
Allan T. Mitchell, Heath, TX (US);
Weidong Tian, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of fabricating a one-time programmable (OTP) memory cell with improved read current in one of its programmed states, and a memory cell so fabricated. The OTP memory cell is constructed with trench isolation structures on its sides. After trench etch, and prior to filling the isolation trenches with dielectric material, a fluorine implant is performed into the trench surfaces. The implant may be normal to the device surface or at an angle from the normal. Completion of the cell transistor to form a floating-gate metal-oxide-semiconductor (MOS) transistor is then carried out. Improved on-state current (I) results from the fluorine implant.