The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Mar. 19, 2012
Rafael I. Aldaz, Santa Clara, CA (US);
John E. Epler, San Jose, CA (US);
Patrick N. Grillot, San Jose, CA (US);
Michael R. Krames, Los Altos, CA (US);
Rafael I. Aldaz, Santa Clara, CA (US);
John E. Epler, San Jose, CA (US);
Patrick N. Grillot, San Jose, CA (US);
Michael R. Krames, Los Altos, CA (US);
Philips Lumileds Lighting Company, LLC, San Jose, CA (US);
Abstract
An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to a mount via the contacts. A growth substrate is removed from the semiconductor structure and a thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 μm some embodiments, less than 10 μm in some embodiments. The top side of the semiconductor structure may be textured.