The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Feb. 04, 2011
Richard M. Laine, Ann Arbor, MI (US);
Dean Richard Massey, Ann Arbor, MI (US);
Peter Young Peterson, Saline, MI (US);
Richard M. Laine, Ann Arbor, MI (US);
Dean Richard Massey, Ann Arbor, MI (US);
Peter Young Peterson, Saline, MI (US);
Other;
Abstract
The invention is generally related to process for generating one or more molecules having the formula SiH, SiD, SiHD, and mixtures thereof, where x,y and z are integers ≧1, H is hydrogen and D is deuterium, such as silane, comprising the steps of: providing a silicon containing material, wherein the silicon containing material includes at least 20 weight percent silicon atoms based on the total weight of the silicon containing material; generating a plasma capable of vaporizing a silicon atom, sputtering a silicon atom, or both using a plasma generating device; and contacting the plasma to the silicon containing material in a chamber having an atmosphere that includes at least about 0.5 mole percent hydrogen atoms and/or deuterium atoms based on the total moles of atoms in the atmosphere; so that a molecule having the formula SiH; (e.g., silane) is generated. The process preferably includes a step of removing one or more impurities from the SiH(e.g., the silane) to form a clean SiH, SiD, SiHD(e.g., silane). The process may also include a step of reacting the SiH, SiD, SiHD(e.g., the silane) to produce a high purity silicon containing material such as electronic grade metallic silicon, photovoltaic grade metallic silicon, or both.