The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8679301 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 25, 2014

Filed:

Aug. 01, 2007
Applicant:

Chang Man Park, Mountain View, CA (US);

Inventor:

Chang Man Park, Mountain View, CA (US);

Assignee:

HGST Netherlands B.V., Amsterdam, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and apparatus for performing pasting in a deposition chamber. The method includes depositing a Ti pasting layer on at least the interior portion of the deposition chamber by sputtering a Ti target, thereby reducing contaminants in the deposition chamber for subsequent depositions. The method also includes, after depositing the Ti pasting layer on at least the interior portion of the deposition chamber, depositing a second layer on a wafer within the deposition chamber. The second layer comprises at least one of MgO and Mg.


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Park, Chang. (2014). Repeatability for rf mgo tmr barrier layer process by implementing ti pasting (U.S. Patent No. 8679301). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8679301

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