The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2014

Filed:

Sep. 05, 2008
Applicants:

Michael J. Cornwell, San Jose, CA (US);

Christopher P. Dudte, San Jose, CA (US);

Inventors:

Michael J. Cornwell, San Jose, CA (US);

Christopher P. Dudte, San Jose, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A partial voltage level read is made on memory cells of a solid state memory device during a voltage settling time after the memory cells are charged (e.g., by a pulse from a charge pump). Digital values representing partial voltage levels are checked for errors (e.g., by an error correction code (ECC) engine). If the values can be corrected, then the values are released for host access. If the values cannot be corrected, then a full voltage read is performed on the memory cells after the voltage levels have substantially settled. Digital values corresponding to the full voltage reads can be released for host access. The use of partial voltage reads results in faster read of solid state memory devices.


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