The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Nov. 15, 2012
Shigeki Koya, Koganei, JP;
Shinichiro Takatani, Mitaka, JP;
Takashi Ogawa, Tokyo, JP;
Akishige Nakajima, Higashiyamato, JP;
Yasushi Shigeno, Maebashi, JP;
Shigeki Koya, Koganei, JP;
Shinichiro Takatani, Mitaka, JP;
Takashi Ogawa, Tokyo, JP;
Akishige Nakajima, Higashiyamato, JP;
Yasushi Shigeno, Maebashi, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg-Rgof a near-I/O FET Qnnear to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rgand Rgof middle-portion FETs Qnand Qn. Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg-Rg, and middle-portion gate resistances Rgand Rg, the distortion of current flowing through the near-I/O gate resistances Rg-Rgnear to the input/output terminal I/O can be reduced.