The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2014

Filed:

May. 14, 2009
Applicant:

Yutaka Urino, Tokyo, JP;

Inventor:

Yutaka Urino, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/10 (2006.01); G02B 6/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light control element includes three or more silicon thin-film layers () placed on a first dielectric layer (), second dielectric layers () placed between the three or more silicon thin-film layers (), and a third dielectric layer () placed to surround the silicon thin-film layers and the second dielectric layers. The three or more silicon thin-film layers are arranged to partially overlap with one anther. In the part where the silicon thin-film layers overlap, the second dielectric layers are placed between the silicon thin-film layers. In the three or more silicon thin-film layers, the silicon thin-film layers adjacent to each other have different conductivity types.


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