The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Jan. 07, 2010
Gabriel Walter, Champaign, IL (US);
Milton Feng, Champaign, IL (US);
Nick Holonyak, Jr., Urbana, IL (US);
Gabriel Walter, Champaign, IL (US);
Milton Feng, Champaign, IL (US);
Nick Holonyak, Jr., Urbana, IL (US);
Quantum Electro Opto Systems Sdn. Rhd., Melaka, MY;
The Board of Trustees of The University of Illinois, Urbana, IL (US);
Abstract
A method for producing light emission from a semiconductor structure, including the following steps: providing a semiconductor structure that includes a first semiconductor junction between an emitter region of a first conductivity type and a base region of a second conductivity type opposite to that of the first conductivity type, and a second semiconductor junction between the base region and a drain region; providing, within the base region, a region exhibiting quantum size effects; providing an emitter electrode coupled with the emitter region; providing a base/drain electrode coupled with the base region and the drain region; and applying signals with respect to the emitter and base/drain electrodes to obtain light emission from the semiconductor structure.