The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Jun. 24, 2011
Hiromichi Takaoka, Kanagawa, JP;
Kenichi Hidaka, Kanagawa, JP;
Hiroshi Tsuda, Kanagawa, JP;
Kiyokazu Ishige, Kanagawa, JP;
Yoshitaka Kubota, Kanagawa, JP;
Takuji Onuma, Kanagawa, JP;
Hiromichi Takaoka, Kanagawa, JP;
Kenichi Hidaka, Kanagawa, JP;
Hiroshi Tsuda, Kanagawa, JP;
Kiyokazu Ishige, Kanagawa, JP;
Yoshitaka Kubota, Kanagawa, JP;
Takuji Onuma, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-Shi, Kanagawa, JP;
Abstract
A first semiconductor device is formed over a substrate and includes a first insulation film, a first electrode, and a first diffusion layer. A second semiconductor device is formed over a substrate and includes a second insulation film, a second electrode, and a second diffusion layer. The second electrode is coupled to the first electrode. A control transistor allows one of a source and a drain to be coupled to the first electrode and the second electrode, allows the other one of the source and the drain to be coupled to a bit line, and allows a gate electrode to be coupled to a word line. A first potential control line is coupled to the first diffusion layer and controls a potential of the first diffusion layer. A second potential control line is coupled to the second diffusion layer and controls a potential of the second diffusion layer.