The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Jan. 20, 2012
Tsuyoshi Sugiura, Yokohama, JP;
Tsuyoshi Sugiura, Yokohama, JP;
Samsung Electro-Mechanics Co., Ltd., Gyunggi-do, KR;
Abstract
There is provided a high frequency semiconductor switch for improving insertion loss characteristics and harmonic characteristics by providing good voltage distribution in a gate wiring. The field effect transistor includes a source wiring electrically connected to a source region formed on a substrate and extending unidirectionally; a drain wiring electrically connected to a drain region formed on the substrate and extending in parallel with the source wiring; a gate having a parallel portion extending between the source wiring and the drain wiring in approximately parallel with the source wiring and the drain wiring; a gate wiring applying voltage to the gate; and a gate via electrically connecting the gate to the gate wiring, the parallel portion including two ends and formed with a path applying voltage to each of the two ends from the gate via.