The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Feb. 28, 2012
Dubravko Babić, Santa Clara, CA (US);
Firooz Faili, Los Gatos, CA (US);
Daniel Francis, Oakland, CA (US);
Quentin Diduck, Ithaca, NY (US);
Felix Ejeckam, San Francisco, CA (US);
Dubravko Babić, Santa Clara, CA (US);
Firooz Faili, Los Gatos, CA (US);
Daniel Francis, Oakland, CA (US);
Quentin Diduck, Ithaca, NY (US);
Felix Ejeckam, San Francisco, CA (US);
Element Six Technologies US Corporation, Santa Clara, CA (US);
Abstract
Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.