The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Apr. 10, 2012
Jin-myung Kim, Goyang, KR;
Se-woong OH, Anyang, KR;
Jae-gil Lee, Incheon, KR;
Young-chul Choi, Seoul, KR;
Ho-cheol Jang, Bucheon, KR;
Jin-myung Kim, Goyang, KR;
Se-woong Oh, Anyang, KR;
Jae-gil Lee, Incheon, KR;
Young-chul Choi, Seoul, KR;
Ho-cheol Jang, Bucheon, KR;
Fairchild Korea Semiconductor Ltd., Bucheon, KR;
Abstract
A power semiconductor device includes: a drain region of a first conductive type; a drift region of a first conductive type formed on the drain region; a first body region of a second conductive type formed below an upper surface of the drift region; a second body region of a second conductive type formed below the upper surface of the drift region and in the first body region; a third body region of a second conductive type formed by protruding downwards from a lower end of the first body region; a source region of a first conductive type formed below the upper surface of the drift region and in the first body region; and a gate insulating layer formed on channel regions of the first body region and on the drift region between the first body regions.