The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2014

Filed:

Dec. 21, 2010
Applicants:

Yih-der Guo, Hsinchu, TW;

Chu-li Chao, Hsinchu, TW;

Yen-hsiang Fang, Taipei County, TW;

Ruey-chyn Yeh, Hsinchu County, TW;

Kun-fong Lin, Hsinchu, TW;

Inventors:

Yih-Der Guo, Hsinchu, TW;

Chu-Li Chao, Hsinchu, TW;

Yen-Hsiang Fang, Taipei County, TW;

Ruey-Chyn Yeh, Hsinchu County, TW;

Kun-Fong Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each crystal pier, is connected between the crystal piers at its bottom, and is separated from the starting substrate by an empty space between the crystal piers. An epitaxial substrate structure is also described, which can be formed by growing an epitaxial layer over the above substrate structure form the crystal piers. The crystal piers may be broken after the epitaxial layer is grown.


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