The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Mar. 04, 2010
Shuichi Nagamatsu, Fukuoka, JP;
Wataru Takashima, Fukuoka, JP;
Tatsuo Okauchi, Fukuoka, JP;
Tetsuji Moriguchi, Fukuoka, JP;
Katsuhiro Mizoguchi, Fukuoka, JP;
Keiichi Kaneto, Fukuoka, JP;
Shuzi Hayase, Fukuoka, JP;
Shuichi Nagamatsu, Fukuoka, JP;
Wataru Takashima, Fukuoka, JP;
Tatsuo Okauchi, Fukuoka, JP;
Tetsuji Moriguchi, Fukuoka, JP;
Katsuhiro Mizoguchi, Fukuoka, JP;
Keiichi Kaneto, Fukuoka, JP;
Shuzi Hayase, Fukuoka, JP;
Kyushu Institute of Technology, Fukuoka, JP;
Abstract
An organic thin-film transistor comprising a gate electrode, a gate insulator layer, an organic semiconductor layer, a source electrode and a drain electrode wherein the organic semiconductor layer consists of the organic semiconductor material having the structure represented by the general formula (1) shown below, and the organic semiconductor layer has crystallinity: