The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Aug. 17, 2012
Applicants:
Katsumi Ono, Tokyo, JP;
Masato Negishi, Tokyo, JP;
Masato Suzuki, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/46 (2006.01); H01L 21/78 (2006.01); H01L 21/301 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a semiconductor device includes forming a starting-point crack on a cleavage line on a surface of a semiconductor substrate; forming preliminary cracks intermittently along the cleavage line on the surface of the semiconductor substrate; and cleaving the semiconductor substrate along the cleavage line passing through the preliminary cracks, from the starting-point crack, wherein each of the preliminary cracks has a crack joining the cleavage line from outside of the cleavage line, in a direction of a progress of cleaving.