The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Sep. 14, 2012
Julien Cuzzocrea, Saint Sernin du Bois, FR;
Laurent-luc Chapelon, Domene, FR;
Julien Cuzzocrea, Saint Sernin du Bois, FR;
Laurent-Luc Chapelon, Domene, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Abstract
A method is for formation of an electrically conducting through-via within a first semiconductor support having a front face and comprising a silicon substrate. The method may include forming of a first insulating layer on top of the front face of the first semiconductor support, fabricating a handle including, within an additional rigid semiconductor support having an intermediate semiconductor layer, and forming on either side of the intermediate semiconductor layer of a porous region and of an additional insulating layer. The method may also include direct bonding of the first insulating layer and of the additional insulating layer, and thinning of the silicon substrate of the first semiconductor support so as to form a back face opposite to the front face.