The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Sep. 22, 2011
Weonhong Kim, Suwon-si, KR;
Dae-kwon Joo, Osan-si, KR;
Hajin Lim, Seoul, KR;
Jinho DO, Yongin-si, KR;
Kyungil Hong, Suwon-si, KR;
Moonkyun Song, Anyang-si, KR;
WeonHong Kim, Suwon-si, KR;
Dae-Kwon Joo, Osan-si, KR;
Hajin Lim, Seoul, KR;
Jinho Do, Yongin-si, KR;
Kyungil Hong, Suwon-si, KR;
Moonkyun Song, Anyang-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes forming a lower interfacial layer on a semiconductor layer, the lower interfacial layer being a nitride layer, forming an intermediate interfacial layer on the lower interfacial layer, the intermediate interfacial layer being an oxide layer, and forming a high-k dielectric layer on the intermediate interfacial layer. The high-k dielectric layer has a dielectric constant that is higher than dielectric constants of the lower interfacial layer and the intermediate interfacial layer.