The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2014

Filed:

Sep. 09, 2011
Applicants:

Seiichi Sato, Ako-gun, JP;

Mari Miyano, Nishitokyo, JP;

Shigeki Endo, Tokorozawa, JP;

Osamu Shiino, Nishitokyo, JP;

Shingo Ono, Higashimurayama, JP;

Masato Yoshikawa, Kodaira, JP;

Inventors:

Seiichi Sato, Ako-gun, JP;

Mari Miyano, Nishitokyo, JP;

Shigeki Endo, Tokorozawa, JP;

Osamu Shiino, Nishitokyo, JP;

Shingo Ono, Higashimurayama, JP;

Masato Yoshikawa, Kodaira, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An object and project of the present invention is to provide a method for producing silicon fine particles and a method for controlling a particle diameter of silicon fine particles which enable efficient production of silicon fine particles having a uniform particle diameter. A the characteristics of the present invention is producing silicon fine particles having a smaller particle diameter than silicon particles and controlling a particle diameter of silicon fine particles by immersing the silicon particles into an etching solution and irradiating the silicon particles immersed in the etching solution with light having a larger energy than a band gap energy of the silicon particles.


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