The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2014

Filed:

Aug. 28, 2009
Applicants:

Sei Uemura, Tsukuba, JP;

Toshihide Kamata, Tsukuba, JP;

Inventors:

Sei Uemura, Tsukuba, JP;

Toshihide Kamata, Tsukuba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 24/00 (2006.01); C04B 14/00 (2006.01); C08F 2/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a process for producing a silicon oxide or silicon oxynitride thin film having a high level of water vapor and oxygen barrier property and a high strength with a higher efficiency by a solution process which is advantageous in productivity. Also disclosed is a thin film that is obtained by the process and is useful, for example, as a protective film for electric elements such as organic EL elements. A solution containing a smectite group silicate layered compound and a silazane compound is coated onto a surface of a substrate by a liquid phase process to form a film. The thin film thus obtained is exposed to ultraviolet light under an oxygen atmosphere to produce a silicon oxide thin film or a silicon oxynitride compound thin film containing the smectite group silicate layered compound. The smectite group silicate compound is a material represented by the following general formula.ABSiOHO  [Chemical Formula 1]


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