The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2014

Filed:

Oct. 28, 2010
Applicants:

I-yu Huang, Kaohsiung, TW;

Chang-yu Lin, Kaohsiung, TW;

Yu-hung Chen, Kaohsiung, TW;

Inventors:

I-Yu Huang, Kaohsiung, TW;

Chang-Yu Lin, Kaohsiung, TW;

Yu-Hung Chen, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/22 (2013.01); H01L 41/18 (2006.01);
U.S. Cl.
CPC ...
Abstract

A manufacturing method for a Zinc Oxide (ZnO) piezoelectric thin-film with high C-axis orientation comprises the steps of providing a substrate having a base, a SiOlayer and a SiNlayer; forming a bottom electrode layer on the SiNlayer; patterning the bottom electrode layer; sputtering a Zinc Oxide layer on the SiNlayer and the bottom electrode layer; forming a photoresist layer on the SiNlayer and the Zinc Oxide layer; patterning the photoresist layer to reveal the Zinc Oxide layer; forming a top electrode layer on the Zinc Oxide layer and the photoresist layer; removing the photoresist layer and the top electrode layer formed on the photoresist layer, and the top electrode layer formed on the Zinc Oxide layer can be remained; and patterning the SiNlayer to form a recess that reveals the base of the substrate.


Find Patent Forward Citations

Loading…