The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2014
Filed:
Nov. 23, 2010
Atsushi Tanaka, Kanagawa, JP;
Takeshi Hama, Kanagawa, JP;
Atsushi Tanaka, Kanagawa, JP;
Takeshi Hama, Kanagawa, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
An optical sensor that is a transistor which includes a gate electrode including a semiconductor material where the carrier concentration is 1.0×10/cmto 1.0×10/cm, an active layer including a semiconductor layer to form a channel by carriers of the same type as the gate electrode, a source electrode, a drain electrode, and a gate insulating film, wherein intensity of irradiated light is detected by a change in a value of current flowing between the source electrode and the drain electrode when the light is irradiated onto a depletion layer formed in the gate electrode; an optical sensor array, an optical sensor driving method, and an optical sensor array driving method are provided.