The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2014

Filed:

Nov. 26, 2009
Applicant:

Monuko Du Plessis, Pretoria, ZA;

Inventor:

Monuko Du Plessis, Pretoria, ZA;

Assignee:

Insiava (Pty) Limited, Hillcrest, ZA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
Abstract

A light emitting device () comprises an elongate first body () of a semiconductor material. A transverse junction () is formed in the first body between a first n+-type region () of the first body and a second p-type region (). A third p+-type region () is spaced from the first region by the second region. A second body () of an isolation material is provided immediately adjacent at least part of the second region to at least partially encapsulate the first body. A terminal arrangement () is connected to the first body and is arranged to reverse bias the junction () into a breakdown mode. The device is configured such that a depletion region associated with the junction () extends through the second region () and reaches the third region () before the junction () enters the breakdown mode.


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