Thin film transistor substrate and method for fabricating the same

Abstract

The present invention relates to a thin film transistor substrate and a method for fabricating the same which can reduce a number of steps. The method for fabricating a thin film transistor substrate includes the steps of a first mask step forming a first conductive pattern on a substrate to include a gate electrode and a gate line, a second mask step depositing a gate insulating film on the substrate having the first conductive pattern formed thereon and forming a second conductive pattern on the gate insulating film to include a semiconductor pattern, source and drain electrodes and data line, a third mask step depositing a first protective film on the substrate having the second conductive pattern formed thereon and forming a pixel contact hole for exposing the drain electrode passed through the first protective film, a fourth mask step forming a third conductive pattern on the first protective films to have a common electrode and a common line and a second protective film to form an undercut with the common electrode and to include a pixel contact hole which exposes the drain electrode on the common electrode, and a fifth mask step forming a fourth conductive pattern to include a pixel electrode spaced from the common electrode by a space provided by the undercut.