The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2014

Filed:

Nov. 30, 2011
Applicants:

Shunpei Yamazaki, Setagaya, JP;

Masashi Tsubuku, Atsugi, JP;

Kengo Akimoto, Atsugi, JP;

Hiroki Ohara, Sagamihara, JP;

Tatsuya Honda, Isehara, JP;

Takatsugu Omata, Isehara, JP;

Yusuke Nonaka, Atsugi, JP;

Masahiro Takahashi, Atsugi, JP;

Akiharu Miyanaga, Tochigi, JP;

Inventors:

Shunpei Yamazaki, Setagaya, JP;

Masashi Tsubuku, Atsugi, JP;

Kengo Akimoto, Atsugi, JP;

Hiroki Ohara, Sagamihara, JP;

Tatsuya Honda, Isehara, JP;

Takatsugu Omata, Isehara, JP;

Yusuke Nonaka, Atsugi, JP;

Masahiro Takahashi, Atsugi, JP;

Akiharu Miyanaga, Tochigi, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.


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