The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2014
Filed:
Jul. 02, 2010
Chris Knutson, Corvallis, OR (US);
Rick Presley, Lebanon, OR (US);
John F. Wager, Corvallis, OR (US);
Douglas Keszler, Corvallis, OR (US);
Randy Hoffman, Corvallis, OR (US);
Chris Knutson, Corvallis, OR (US);
Rick Presley, Lebanon, OR (US);
John F. Wager, Corvallis, OR (US);
Douglas Keszler, Corvallis, OR (US);
Randy Hoffman, Corvallis, OR (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Oregon State University, Corvallis, OR (US);
Abstract
A thin-film transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, a channel layer, and a passivation layer. The channel layer has a first surface and an opposed second surface, where the first surface is disposed over at least a portion of the gate dielectric. The channel layer also has a first oxide composition including at least one predetermined cation. The passivation layer is disposed adjacent to at least a portion of the opposed second surface of the channel layer. The passivation layer has a second oxide composition including the at least one predetermined cation of the first oxide composition and at least one additional cation that increases a bandgap of the passivation layer relative to the channel layer.