The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2014

Filed:

Nov. 04, 2011
Applicant:

Yan YE, Saratoga, CA (US);

Inventor:

Yan Ye, Saratoga, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 31/062 (2012.01); H01L 27/146 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention generally relates to an offset electrode TFT and a method of its manufacture. The offset electrode TFT is a TFT in which one electrode, either the source or the drain, surrounds the other electrode. The gate electrode continues to be below both the source and the drain electrodes. By redesigning the TFT, less voltage is necessary to transfer the voltage from the source to the drain electrode as compared to traditional bottom gate TFTs or top gate TFTs. The offset electrode TFT structure is applicable not only to silicon based TFTs, but also to transparent TFTs that include metal oxides such as zinc oxide or IGZO and metal oxynitrides such as ZnON.


Find Patent Forward Citations

Loading…