The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2014
Filed:
Oct. 23, 2008
Sun-il Kim, Daejeon, KR;
Young-soo Park, Seoul, KR;
I-hun Song, Seongnam-si, KR;
Chang-jung Kim, Yongin-si, KR;
Jae-chul Park, Seoul, KR;
Sang-wook Kim, Suwon-si, KR;
Sun-il Kim, Daejeon, KR;
Young-soo Park, Seoul, KR;
I-hun Song, Seongnam-si, KR;
Chang-jung Kim, Yongin-si, KR;
Jae-chul Park, Seoul, KR;
Sang-wook Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, unknown;
Abstract
A transistor according to example embodiments may include a channel layer, a source and a drain respectively contacting ends of the channel layer, a gate electrode separated from the channel layer, a gate insulating layer interposed between the channel layer and the gate electrode, and/or an insertion layer that is formed between the channel layer and the gate insulating layer. The insertion layer may have a work function different from that of the channel layer.