The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2014
Filed:
Jun. 03, 2009
Hisayuki Miki, Chiba, JP;
Yasunori Yokoyama, Ichihara, JP;
Takehiko Okabe, Chiba, JP;
Kenzo Hanawa, Ichihara, JP;
Hisayuki Miki, Chiba, JP;
Yasunori Yokoyama, Ichihara, JP;
Takehiko Okabe, Chiba, JP;
Kenzo Hanawa, Ichihara, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Abstract
One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer () made of a group III nitride is laminated on a substrate (), an n-type semiconductor layer () comprising a base layer (), a light-emitting layer (), and a p-type semiconductor layer () are laminated on the buffer layer () in this order, comprising: a pretreatment step in which the substrate () is treated with plasma; a buffer layer formation step in which the buffer layer () having a composition represented by AlGaN (0≦x<1) is formed on the pretreated substrate () by activating with plasma and reacting at least a metal gallium raw material and a gas containing a group V element; and a base layer formation step in which the base layer () is formed on the buffer layer ().