The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2014

Filed:

Jun. 24, 2008
Applicants:

Yuma Kamiyama, Kyoto, JP;

Kazuyoshi Honda, Osaka, JP;

Yasuharu Shinokawa, Osaka, JP;

Hiromasa Yagi, Osaka, JP;

Tomofumi Yanagi, Osaka, JP;

Kunihiko Bessho, Osaka, JP;

Inventors:

Yuma Kamiyama, Kyoto, JP;

Kazuyoshi Honda, Osaka, JP;

Yasuharu Shinokawa, Osaka, JP;

Hiromasa Yagi, Osaka, JP;

Tomofumi Yanagi, Osaka, JP;

Kunihiko Bessho, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/037 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.


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