The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Sep. 23, 2011
Zhan Chai, Shanghai, CN;
Jing Chen, Shanghai, CN;
Jiexin Luo, Shanghai, CN;
Qingqing Wu, Shanghai, CN;
Xi Wang, Shanghai, CN;
Zhan Chai, Shanghai, CN;
Jing Chen, Shanghai, CN;
Jiexin Luo, Shanghai, CN;
Qingqing Wu, Shanghai, CN;
Xi Wang, Shanghai, CN;
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Changning District, Shanghai, CN;
Abstract
A calibration method for a device using TCAD to emulation SOI field effect transistor, where process emulation MOS device structures with different channel lengths Lgate are obtained by establishing a TCAD process emulation program; the process emulation MOS device structures are calibrated according to a TEM test result, a SIMS test result, a CV test result, a WAT test result, and a square resistance test result of an actual device, so as to complete TCAD emulation calibration of key electrical parameters of an SOI field effect transistor. Thereby, providing effective guidance for research, development and optimization of a new process flow are realized.