The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Mar. 30, 2011
Reza Jalilizeinali, San Diego, CA (US);
Eugene R. Worley, San Diego, CA (US);
Evan Siansuri, San Diego, CA (US);
Sreeker Dundigal, San Diego, CA (US);
Reza Jalilizeinali, San Diego, CA (US);
Eugene R. Worley, San Diego, CA (US);
Evan Siansuri, San Diego, CA (US);
Sreeker Dundigal, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Diodes, including gated diodes and shallow trench isolation (STI) diodes, manufacturing methods, and related circuits are provided without at least one halo or pocket implant thereby reducing capacitance of the diode. In this manner, the diode may be used in circuits and other devices having performance sensitive to load capacitance while still obtaining the performance characteristics of the diode. Such characteristics for a gated diode include fast turn-on times and high conductance, making the gated diodes well-suited for electro-static discharge (ESD) protection circuits as one example. Diodes include a semiconductor substrate having a well region and insulating layer thereupon. A gate electrode is formed over the insulating layer. Anode and cathode regions are provided in the well region. A P-N junction is formed. At least one pocket implant is blocked in the diode to reduce capacitance.