The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Jan. 11, 2011
Applicants:
Yang Wu, Tainan, TW;
Feixia Yu, Tainan, TW;
Assignee:
Himax Imaging, Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
Abstract
A hole-based ultra-deep photodiode in a CMOS image sensor and an associated process are disclosed. A p-type substrate is grounded or connected to a negative power supply. An n-type epitaxial layer is grown on the p-type substrate, and is connected to a positive power supply. An ultra-deep p-type photodiode implant region is formed in the n-type epitaxial layer. Thermal steps are added to insure a smooth and deep doping profile.