The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Jan. 14, 2009
Yang LU, Fremont, CA (US);
Budong You, Fremont, CA (US);
Marco A. Zuniga, Palo Alto, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Yang Lu, Fremont, CA (US);
Budong You, Fremont, CA (US);
Marco A. Zuniga, Palo Alto, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Volterra Semiconductor Corporation, Fremont, CA (US);
Abstract
A transistor includes a substrate, a well formed in the substrate, a drain including a first impurity region implanted in the well, a source including a second impurity region implanted in the well and spaced apart from the first impurity region, a channel for current flow from the drain to the source, and a gate to control a depletion region between the source and the drain The channel has an intrinsic breakdown voltage, and the well, drain and source are configured to provide an extrinsic breakdown voltage lower than the intrinsic breakdown voltage and such that breakdown occurs in a breakdown region in the well located outside the channel and adjacent the drain or the source.