The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Jun. 18, 2010
Takayuki Hashimoto, Tokai, JP;
Takashi Hirao, Hitachinaka, JP;
Noboru Akiyama, Hitachinaka, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
In a lateral-type power MOSFET, high breakdown voltage is achieved with suppressing to increase a cell pitch, and a feedback capacity and an ON resistance are decreased. An ntype silicon region having a high resistance to be a region of maintaining a breakdown voltage is vertically provided with respect to a main surface of an ntype silicon substrate, and the ntype silicon region having the high resistance is connected to the ntype silicon substrate. Also, a conductive substance is filled through an insulating substance inside a trench formed to reach the ntype silicon substrate from the main surface of the ntype silicon substrate so as to contact with the ntype silicon region having the high resistance, and the conductive substance is electrically connected to a source electrode.