The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Mar. 09, 2007
Ki Bum Nam, Ansan-si, KR;
Ki Bum Nam, Ansan-si, KR;
Seoul Opto Device Co., Ltd., Ansan-si, KR;
Abstract
The present invention relates to a light emitting diode having an AlGaN buffer layer and a method of fabricating the same, and more particularly, to a light emitting diode having an AlGaN buffer layer, wherein between a substrate and a GaN-based semiconductor layer, the Al x Ga 1-x N (O≦x≦1) buffer layer having the composition ratio x of Al decreasing from the substrate to the GaN-based semiconductor layer is interposed to reduce lattice mismatch between the substrate and the GaN-based semiconductor layer, and a method of fabricating the same. To this end, the present invention provides a light emitting diode comprising a substrate; a first conductive semiconductor layer positioned on the substrate; and an AlGaN (O≦x≦1) buffer layer interposed between the substrate and the first conductive semiconductor layer and having a composition ratio x of Al decreasing from the substrate to the first conductive semiconductor layer.